Random number generator via hexagonal boron nitride heterostructure

The nonlinearity is the heart of cryptographic methods which are based on the generation of pseudorandom
numbers. In this study, the metal-insulator transition in hexagonal boron nitride (hBN) was
investigated as a true random number generator. Wehave focused on the environmental-dependent
behavior of hBN lattices, such as lattice size, impurity types, and applied external voltage on
conductivity. The study was carried out based on random matrix theory, with spectral analysis of
energy level spectrum and fractal dimension. The results indicate that by increasing the value of the
electrical field, the hBN lattice behavior changes from Poisson (regular) to Wigner distribution
(chaotic). The study of current-voltage variation has shown the periodic windows of quasi ohmic and
the negative differential resistance. The produced electrical current ability as a random number has
been examined through generating a dynamical S-box.